Arnab Mondal

About

I am research scholar at Indian Institute of Technology Mandi, India. Topics of research are semiconductor physics, optoelectronic devices and semiconductor material growth.

Employment

• Indian Institute of Technology Mandi Research Scholar
  2018 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• Engineering unidirectional photocurrent in isotype-Ga 2 O 3 /GaN-based light-activated diodes
  Physical Review Applied 2026 DOI: 10.1103/tgc4-k6lw
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• Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics
  Applied Physics Letters 2024 DOI: 10.1063/5.0215146
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• Unveiling Thermal Effects on Sn-Doped β-Ga2O3 Schottky Barrier Diodes on Sapphire for High-Temperature Power Electronics
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3333818
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• Oxygen mediated optical and electrical property modification of RF sputtered Ga2O3 thin films for photodetector application
  Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XIX 2022 DOI: 10.1117/12.2633278
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• Broad Range (254–302 nm) and High Performance Ga2O3:SnO2 Based Deep UV Photodetector
  IEEE Transactions on Nanotechnology 2022 DOI: 10.1109/tnano.2022.3186472
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• Ga-In Nanoparticle Induced UV Plasmonic Impact on Heterojunction Based Deep UV Photodetector
  IEEE Transactions on Nanotechnology 2022 DOI: 10.1109/tnano.2022.3168495
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• Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)
  IEEE Transactions on Device and Materials Reliability 2021 DOI: 10.1109/tdmr.2021.3125244
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• Integration of β-Ga2O3 on Si (100) for Lateral Schottky Barrier Diodes
  2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2021 DOI: 10.1109/wipda49284.2021.9645081
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• Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes
  Journal of Vacuum Science & Technology A 2021 DOI: 10.1116/6.0000858
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• Transition from thin film to nanostructure in low pressure chemical vapor deposition growth of β-Ga2O3: Impact of metal gallium source
  Thin Solid Films 2020 DOI: 10.1016/j.tsf.2020.138234
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