Shreepad Karmalkar

Employment

• Indian Institute of Technology Professor

Education

• Indian Institute of Technology Madras PhD
  1983 - 1989
• Indian Institute of Technology Madras B.Tech
  1978 - 1983

Projects & Funding

Projects & funding information is unavailable.

Publications (73)

• Comparison of two DC extraction methods for mobility and parasitic resistances in a HEMT
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2017.2663764
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• An Analytical Model of the Frequency Dependent 3-D Current Spreading in Forward Biased Shallow Rectangular p-n Junctions
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/TED.2016.2642995
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• Effective medium theory based analytical models for the potential and field distributions in arrays of nanoscale junctions
  Journal of Applied Physics 2017 DOI: 10.1063/1.4991485
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• Doping dependence of the contact resistivity of end-bonded metal contacts to thin heavily doped semiconductor nanowires
  Journal of Applied Physics 2017 DOI: 10.1063/1.4991542
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• A Quasi-Static Model for the Coupling Impedance between Coplanar Rectangular Contacts on a Bulk Substrate
  Proceedings of the IEEE International Conference on VLSI Design 2016 DOI: 10.1109/VLSID.2016.18
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• DC Extraction of Gate Bias-Dependent Parasitic Resistances and Channel Mobility in an HEMT
  IEEE Electron Device Letters 2016 DOI: 10.1109/LED.2016.2611597
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• Effective medium theory of the space-charge region electrostatics of arrays of nanoscale junctions
  Journal of Applied Physics 2016 DOI: 10.1063/1.4939763
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• Erratum: An analytical model of the dc and frequency-dependent 2-D and 3-D current spreading in forward-biased shallow p-n junctions (IEEE Transactions on Electron Devices (2015) 62:2 (471-477))
  IEEE Transactions on Electron Devices 2016 DOI: 10.1109/TED.2016.2545921
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• An analytical model of the DC and frequency-dependent 2-D and 3-D current spreading in forward-biased shallow p-n junctions
  IEEE Transactions on Electron Devices 2015 DOI: 10.1109/TED.2014.2379638
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• Analytical theory of the space-charge region of lateral p-n junctions in nanofilms
  Journal of Applied Physics 2015 DOI: 10.1063/1.4926478
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