Avinash Kumar

Employment

• Intel Corporation Data Scientist (Device Engineer)
  2022 - Present

Education

• University at Buffalo Ph.D
  2017 - 2022

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• Ultrawide Bandgap β-Ga2O3 Semiconductor
  2023 DOI: 10.1063/9780735425033
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• Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures
  Journal of Applied Physics 2022 DOI: 10.1063/5.0109577
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• Plasmon–Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V–1 s–1
  ACS Nano 2022 DOI: 10.1021/acsnano.1c09535
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• High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors
  Applied Physics Letters 2022 DOI: 10.1063/5.0083166
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• β-Gallium oxide power electronics
  APL Materials 2022 DOI: 10.1063/5.0060327
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• Erratum: “Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures” [J. Appl. Phys. 128, 105703 (2020)]
  Journal of Applied Physics 2021 DOI: 10.1063/5.0048135
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• First principles study of thermoelectric properties of β -gallium oxide
  Applied Physics Letters 2020 DOI: 10.1063/5.0027791
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• Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures
  Journal of Applied Physics 2020 DOI: 10.1063/5.0008578
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• (Invited) Electron Transport in Bulk and 2DEGs in beta-Ga2O3 and kV Class Laterals Device in beta-Ga2O3
  ECS Meeting Abstracts 2020 DOI: 10.1149/ma2020-01231336mtgabs
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• Gallium Oxide
  Springer International Publishing 2020 DOI: 10.1007/978-3-030-37153-1
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