Ekta Goel

Employment

• National Institute of Technology Warangal Assistant Professor
  2020 - Present
• Jaypee Institute of Information Technology Assistant Professor (Sr. Grade)
  2018 - 2020

Education

• Indian Institute of Technology BHU Ph.D.
  2013 - 2018

Projects & Funding

Projects & funding information is unavailable.

Publications (24)

• 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/ted.2017.2773560
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• Ferro-electric stacked gate oxide heterojunction electro-statically doped source/drain double-gate tunnel field effect transistors: A superior structure
  Materials Science in Semiconductor Processing 2017 DOI: 10.1016/j.mssp.2017.07.014
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• Effects of source/drain elevation and side spacer dielectric on drivability performance of non-abrupt ultra shallow junction gate underlap GAA MOSFETs
  Indian Journal of Physics 2017 DOI: 10.1007/s12648-017-1091-2
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• Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs
  Superlattices and Microstructures 2017 DOI: 10.1016/j.spmi.2017.03.047
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• 2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs
  Indian Journal of Physics 2017 DOI: 10.1007/s12648-017-1019-x
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• 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/ted.2017.2656630
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• 2-D Analytical Threshold Voltage Model for Dielectric Pocket Double-Gate Junctionless FETs by Considering Source/Drain Depletion Effect
  IEEE Transactions on Electron Devices 2017 DOI: 10.1109/ted.2016.2646460
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• Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistors
  Materials Science in Semiconductor Processing 2017 DOI: 10.1016/j.mssp.2016.10.051
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• Performance evaluation of double gate junctionless field effect transistor with vertical Gaussian doping profile
  2016 IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, RTEICT 2016 - Proceedings 2017 DOI: 10.1109/RTEICT.2016.7807930
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• Temperature sensitivity analysis of double gate junctionless field effect transistor with vertical Gaussian doping profile
  Proceedings - 2016 International Conference on Micro-Electronics and Telecommunication Engineering, ICMETE 2016 2017 DOI: 10.1109/ICMETE.2016.127
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