Vipin Joshi

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Publications (32)

• Physical Insights Into the Impact of p-GaN Sidewall Passivation on Gate Leakage, Threshold Voltage Instability, and Gate Breakdown Behavior in p-GaN Gate AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3668727
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• Achieving Ultrahigh Threshold Voltage in Enhancement-Mode AlGaN/GaN HEMTs With an AlxTiyO/p-GaN Integrated Gate Stack—Part II
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3652534
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• Improving Threshold Voltage and Its Stability in p-GaN Gated HEMTs by Mechanical Stress Engineering
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3625951
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• Physical Insights Into Turn-On Mechanisms in p-GaN Gate AlGaN/GaN HEMTs—Part I
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3615921
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• Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3462375
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• Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3427097
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• Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3326111
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• Impact of Buffer Capacitance-Induced Trap Charging on Electric Field Distribution and Breakdown Voltage of AlGaN/GaN HEMTs on Carbon-Doped GaN-on-Si
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3321281
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• Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3321864
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• Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3269409
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