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Publications (11)
- 2D SnS2/MoS2 heterojunction as a platform for self-powered, broadband and ultrafast photodetectors Save
- Reduced-graphene oxide decorated γ-In2Se3/Si heterostructure-based broadband photodetectors with enhanced figures-of-merit Save
- Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide Save
- Dependence of defect structure on In concentration in InGaN epilayers grown on AlN/Si(111) substrate Save
- Overcoming the Challenges Associated with the InN/InGaN Heterostructure via a Nanostructuring Approach for Broad Band Photodetection Save
- Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height Save
- Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment Save
- Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces Save
- Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures Save
- Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure Save