Shashank Kumar Dubey

Employment

Employment history is unavailable.

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (25)

• Analysis of an extended source C-pocket TFET with fully overlapping dual metal gate for enhanced low-power and high-frequency performance
  Semiconductor Science and Technology 2026 DOI: 10.1088/1361-6641/ae2ef5
  +Save
• Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications
  Engineering Research Express 2024 DOI: 10.1088/2631-8695/ad2efa
  +Save
• Effect of high-k dielectric HfO2 on performance of AlGaN/GaN based MOSHEMT for RF applications
  Microsystem Technologies 2024 DOI: 10.1007/s00542-023-05576-w
  +Save
• Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers
  IEEE Access 2023 DOI: 10.1109/ACCESS.2023.3337036
  +Save
• Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications
  Physica Scripta 2022 DOI: 10.1088/1402-4896/ac50c3
  +Save
• Characterization of AlGaN/GaN based HEMT for low noise and high frequency application
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2022 DOI: 10.1002/jnm.2932
  +Save
• Radiation Immune SRAM Cell for Deep Space Applications
  Lecture Notes in Electrical Engineering 2021 DOI: 10.1007/978-981-16-1570-2_14
  +Save
• Robust design of noise tolerant 2-phase non overlapping clock generating circuit
  Proceedings of 4th International Conference on 2021 Devices for Integrated Circuit, DevIC 2021 2021 DOI: 10.1109/DevIC50843.2021.9455843
  +Save
• Radiation Tolerant Memory Cell for Aerospace Applications
  Lecture Notes in Electrical Engineering 2021 DOI: 10.1007/978-981-16-1570-2_10
  +Save
• AlGaN/GaN HEMT with recessed t-gate and floating metal for high power applications
  Proceedings of 4th International Conference on 2021 Devices for Integrated Circuit, DevIC 2021 2021 DOI: 10.1109/DevIC50843.2021.9455871
  +Save