0000-0002-7894-0890 Employment
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Publications (24)
- Metal-to-semiconductor transition and application-driven optical response of TMN armchair nanoribbons Save
- Development and Performance Analysis of 8T SRAM Cell at 14 nm FinFET Technology Save
- Composition driven structural, dielectric, ferroelectric, and piezoelectric performances of MnO2 modified (Ba0.85Ca0.15) (Zr0.1Ti0.9)O3 ceramics Save
- Electronic and Magnetic Properties of Armchair and Zigzag Nanoribbons of Transition Metal Nitrides: A DFT Study Save
- Recognizing the site occupancy of Ce on the structural, dielectric, and piezoelectric performance of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 ceramics Save
- Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel Save
- Evolution and performance analysis of quantum well FinFET for 3 nm technology node with type-II strained tri-layered hetero-channel system Save
- Exploration and analysis of n-FinFET implementing stacked high-K at 08 nm gate length Save
- The Optimization and Analysis of a Triple-Fin Heterostructure-on-Insulator Fin Field-Effect Transistor with a Stacked High-k Configuration and 10 nm Channel Length Save
- Exploration of effects of gate underlap in HOI FinFETs at 10 nm gate length Save