Anindya Sarkar

Employment

• Bangabasi Morning College Assistant Professor
  2001 - Present

Education

• University of Calcutta Ph. D.
  2000 - 2012
• University of Calcutta M. Sc.
  1994 - 1996
• Predency College B. Sc. (Hons.)
  1990 - 1994

Projects & Funding

Projects & funding information is unavailable.

Publications (91)

• Ion beam induced defects in ZnO: A radiation hard metal oxide
  Metal Oxide Defects: Fundamentals, Design, Development and Applications 2022
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• Site disorder and its tailoring in N implanted post-annealed ZnO: Prospects and problems
  Materials Science in Semiconductor Processing 2021 DOI: 10.1016/j.mssp.2021.106068
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• Comprehensive understanding of defect complexes in ion irradiated ZnO using Positron annihilation spectroscopy
  Flash Presentation in International Virtual Conference on Nanostructuring by Ion Beams (ICNIB 2021) 2021
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• Depth resolved defect characterization of energetic ion irradiated ZnO by positron annihilation techniques and photoluminescence
  Journal of Physics: Condensed Matter 2020 DOI: 10.1088/1361-648x/ab3f74
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• Raman investigation of N‐implanted ZnO: Defects, disorder and recovery
  Journal of Raman Spectroscopy 2019 DOI: 10.1002/jrs.5732
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• Raman spectroscopic analysis on Li, N and (Li,N) implanted ZnO
  Materials Science in Semiconductor Processing 2018 DOI: 10.1016/j.mssp.2018.02.026
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• Defect microstructure and its unique identification in semiconductors using positron annihilation spectroscopy
  Short ORAL Presentation in Third DAE-BRNS Trombay positron meeting (POSITRON-2018), Mumbai, India 2018
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• Clustered vacancies in ZnO: chemical aspects and consequences on physical properties
  Journal of Physics D: Applied Physics 2018 DOI: 10.1088/1361-6463/aaa992
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• Ab-initiocalculation and experimental observation of room temperature ferromagnetism in 50 keV nitrogen implanted rutile TiO2
  Materials Research Express 2018 DOI: 10.1088/2053-1591/aaab8c
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• Shallow acceptor state in ZnO realized by ion irradiation and annealing route
  Journal of Alloys and Compounds 2017 DOI: 10.1016/j.jallcom.2017.01.331
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