Trupti Ranjan Lenka

About

Dr. Trupti R. Lenka is an Associate Professor in Electronics and Communication Engineering at National Institute of Technology Silchar, Assam, India. He was a Postdoctoral Research Associate in the Department of Electrical and Computer Engineering at Texas Tech University, Lubbock, Tx, USA during 2024-2025. He received Ph.D. in Microelectronics Engineering from Sambalpur University in 2012, MTech in VLSI Design from Dr. A. P. J. Abdul Kalam Technical University in 2007, and B.E. in ECE from Berhampur University in 2000. He has supervised 15 PhD and 26 MTech scholars under his supervision. He has published more than 265 research articles, 8 books, and 4 international patents to his credit.

Employment

• Texas Tech University Postdoctoral Research Associate
  2024 - 2025
• National Institute Of Technology Silchar Associate Professor
  2022 - Present
• National Institute of Technology Silchar Assistant Professor
  2012 - 2022

Education

• Sambalpur University PhD
  2009 - 2012
• Dr. A.P.J. Abdul Kalam Technical University MTech
  2004 - 2007
• Berhampur University BE
  1996 - 2000

Projects & Funding

Projects & funding information is unavailable.

Publications (212)

• Gate-engineered high-performance triple material gate AlGaN/GaN HEMT based biosensor for pH detection
  Microsystem Technologies 2026 DOI: 10.1007/s00542-026-06099-w
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• Au nanoparticle-induced plasmonic enhancement in a chevronic TiO2 UV photodetector for optical sensing applications
  Microsystem Technologies 2026 DOI: 10.1007/s00542-026-06087-0
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• Simulation Modeling of Ferroelectric‐Gated InSe 2D‐HEMT With Enhanced Electrostatic Control and 2DEG Engineering Towards Biosensor Applications
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2026 DOI: 10.1002/jnm.70186
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• Design and Simulation Modelling of MAXI3 and FAXI3 Perovskite Solar Cells with Different Electron Transport Layers and Hole Transport Layers for Energy Harvesting
  physica status solidi (a) 2026 DOI: 10.1002/pssa.202500745
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• Thermal stability analysis of AlGaN/GaN HEMT with multiple quantum wells for emerging nanoelectronics
  Microsystem Technologies 2026 DOI: 10.1007/s00542-025-06009-6
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• A review on the evolution and outlook of E-mode III-nitride HEMTs: Comparative Insights into Architectures and performance
  Micro and Nanostructures 2026 DOI: 10.1016/j.micrna.2025.208412
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• Highly Sensitive Ag Nanoparticle Deposited TiO2 Thin Film-Based Broadband Photodetector
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3681254
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• A novel AlN/β-Ga2O3 high electron mobility transistor with 2 kV and 600 GHz operation
  Microsystem Technologies 2025 DOI: 10.1007/s00542-025-05927-9
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• High performance UV photodetector based on SnO2-TiO2 heterojunction nanowires
  Microsystem Technologies 2025 DOI: 10.1007/s00542-025-05873-6
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• Preface for the special issue MNDCS-2025
  Microsystem Technologies 2025 DOI: 10.1007/s00542-025-05967-1
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