Ashutosh KUMAR

Employment

• RISE Research Institutes of Sweden Scientist (Permanent)
  2020 - Present
• National Institute for Materials Science Post-doctoral Researcher
  2016 - 2020

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (22)

• GaN catalyzed nucleation of thin low threading dislocation GaN on sapphire
  AIP Advances 2026 DOI: 10.1063/5.0323604
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• Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
  Journal of Applied Physics 2023 DOI: 10.1063/5.0139114
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• Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
  Journal of Applied Physics 2023 DOI: 10.1063/5.0142766
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• Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
  Journal of Applied Physics 2022 DOI: 10.1063/5.0087248
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• Combined APT and STEM Analyses
  Characterization of Defects and Deep Levels for GaN Power Devices 2020 DOI: https://aip.scitation.org/doi/full/10.1063/9780735422698_005
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• Influence of implanted Mg concentration on defects and Mg distribution in GaN
  Journal of Applied Physics 2020 DOI: 10.1063/5.0014717
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• Mg diffusion and activation along threading dislocations in GaN
  Applied Physics Letters 2020 DOI: 10.1063/5.0009596
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• Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes
  Journal of Electronic Materials 2020 DOI: 10.1007/s11664-020-08081-2
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• Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
  Journal of Applied Physics 2019 DOI: 10.1063/1.5132345
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• Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization
  Journal of Alloys and Compounds 2019 DOI: 10.1016/j.jallcom.2019.07.234
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