Mehak Ashraf Mir

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Publications (9)

• On the Reliability of GaN Schottky Diodes Under Parasitic Current Injection
  IEEE Access 2026 DOI: 10.1109/ACCESS.2026.3714648
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• Physical Insights Into the Improved Performance and Reliability of GaN-on-Si RF HEMTs Using AlTiO Passivation
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3661879
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• Distinct Breakdown Mechanisms Under DC and Pulsed Conditions in AlGaN/GaN HEMTs With Floating Substrate Termination
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3627588
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• Enhanced ESD Reliability of AlGaN/GaN MIS-HEMTs Using a p-Type Oxide Passivation
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3569269
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• Improving Threshold Voltage and Its Stability in p-GaN Gated HEMTs by Mechanical Stress Engineering
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3625951
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• Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3462375
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• Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3427097
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• A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2021.3074357
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• Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model
  IEEE Journal of the Electron Devices Society 2021 DOI: 10.1109/JEDS.2021.3108159
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