About
Magali Grégoire manages silicide and contacts technological bricks development for STMicroelectronics in Europe and presently working at STMicroelectronics Crolles, near Grenoble in France.
She defended a PhD in materials science on Cu interconnect reliability from University of Grenoble Alps and was hired by STMicroelectronics in 2005 as a process development engineer.
From 2005 to 2007, she spent 2 years developing new chemical mechanical polishing processes for the very challenging isolation integration of advances CMOS devices.
From 2007, she focuses on new contact integrations based on a large scale of thin metallic films depositions (Ni, Co, Ti) on several substrates (Si, Ge, III/V). Based on solid collaborations with academic laboratories (LAAS, IM2NP, IEMN, GPM), and several ANR projects, a large enhancement of reliability and stability of both silicide and contacts integrations is then provided for numerous technologies including photonics (Nanoelec IRT Photonics from 2012). ST leader of the bi-lateral CEA-LETI/STMicroelectronics for advanced materials development and recently graduated of the “Ability to conduct research” (HDR), Magali Grégoire authored or co-authored about 70 papers, supervised 12 Ph. D theses in material sciences and contact integrations on various substrates as III/V. She owns 10 US patents related to new microelectronic technologies. Based on her work, she received in 2021 the STMicroelectronics ABCD Award for multi-site support and the Talent price for Women in technical research from IRT Nanoelec in 2022.
Employment
-
STMicroelectronics (France) Research Director R&D2022 - 2025
Education
-
Aix-Marseille Université Research Director Ability2021 - 2022
Projects & Funding
Projects & funding information is unavailable.
Publications (74)
- How Can the Carrier Mobility in Planar Si-Based MOSFETs Be Enhanced? Save
- Multiple-Step Siconi Pre-Clean Advantages for Ni(Pt)Si Film Formation in the Frame of Advanced Fdsoi Technology Development Save
- Solid-state reactions of nickel thin films with GaAs: A comprehensive analysis Save
- Redistribution of Pt during the agglomeration of NiSi Save
- Multiple-step Siconi pre-clean advantages for Ni(Pt)Si film formation in the frame of advanced FDSOI technology development Save
- C54-TiSi2 formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks Save
- Enhanced RF Switch Performance in RFSOI Technology: Achieving 74 fs RON·COFFand 3.3 V RFVMAXon Thinned SOI Save
- Influence of CoSi Oxidation and Passivation During Silicide Selective Etching on Junction Leakage: Applications to Schottky Diodes Devices Save
- Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: Partial, laser, total, and one-step annealings Save
- Redistribution of Pt During the Agglomeration of NiSi Save