0000-0002-8399-3815 Employment
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Publications (10)
- Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tunable response time Save
- CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications Save
- Electrically Tunable Persistent Photoconductivity Effect in Epitaxial NiO/ZnO Heterojunctions for Artificial Synaptic Devices and Neuromorphic Computing Applications Save
- p-(001)NiO/n-(0001)ZnO heterojunction based ultraviolet photodetectors with controllable response time Save
- p-(001)NiO/n-(0001)ZnO heterojunction devices grown by pulsed laser deposition technique Save
- (0001)n-ZnO/(0001)p-GaN Heterostructure Based Self-Driven Fast UV Photodetectors and the Role of the Polarization Induced Interfacial 2D Electron Gas Channel Save
- Spatially Indirect Excitons in GaN–ZnO Heterostructures with Long and Electrically Controllable Lifetime Save
- Structural and magnetic properties of Ni cluster embedded (111)NiO layers grown on (0001)GaN films Save
- Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques Save
- Raman mode softening in SrMnO3 induced by optical excitation Save