Dr A Akshaykranth

Employment

• NIT Andhra Pradesh Assistant Professor Ad-Hoc
  2025 - Present
• SR University Assistant Professor
  2024 - 2025
• IIT Bombay JRF
  2016 - 2017

Education

• National Institute of Technology Warangal Ph.D
  2017 - 2022
• Jawaharlal Nehru Technological University Hyderabad M.Tech (Nano Technology)
  2013 - 2015
• Jawaharlal Nehru Technological University, Hyderabad B.Tech (ECE)
  2007 - 2011

Projects & Funding

Projects & funding information is unavailable.

Publications (29)

• A novel framework for intrusion detection in IOT networks using hybrid optimization algorithm and convolutional neural networks
  Franklin Open 2026 DOI: 10.1016/j.fraope.2025.100461
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• Evaluating Structural Parameter Variations in AlGaN/GaN HEMTs on Si with Step-Graded InGaN Layers for future Radar and RF Transmitters
  National Academy Science Letters 2025 DOI: 10.1007/s40009-025-01837-6
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• Development of biodegradable PLA/Nanoclay/ZnO polymer films for future Industrial packaging applications
  Results in Surfaces and Interfaces 2025 DOI: 10.1016/j.rsurfi.2025.100518
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• A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens
  Microsystem Technologies 2025 DOI: 10.1007/s00542-024-05835-4
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• Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers
  Results in Engineering 2025 DOI: 10.1016/j.rineng.2025.104151
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• Erratum to: Fe-doped buffer layer with graded layered AlGaN/GaN HEMT for millimeter-wave radar applications (Journal of the Korean Physical Society, (2025), 86, 2, (120-125), 10.1007/s40042-024-01249-7)
  Journal of the Korean Physical Society 2025 DOI: 10.1007/s40042-024-01274-6
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• Fe-doped buffer layer with graded layered AlGaN/GaN HEMT for millimeter-wave radar applications
  Journal of the Korean Physical Society 2025 DOI: 10.1007/s40042-024-01249-7
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• High-Performance T-Gated GaN-HEMT on Silicon Wafer with Step Graded Strain Relief Layered-InGaN Buffer for Future Power Switching Systems
  Semiconductors 2025 DOI: 10.1134/S1063782625601116
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• Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics
  Journal of Materials Science Materials in Electronics 2024 DOI: 10.1007/s10854-024-12747-6
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• Antibacterial activity study of ZnO incorporated biodegradable poly (lactic acid) films for food packaging applications
  Polymer Bulletin 2023 DOI: 10.1007/s00289-022-04126-0
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