Dipjyoti Das

Employment

Employment history is unavailable.

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (42)

• Optimizing Memory Window for Ferroelectric Nand Applications: An Experimental Study on Dielectric Material Selection and Layer Positioning
  IEEE Transactions on Electron Devices 2025 15 citations DOI: 10.1109/TED.2024.3504475
  +Save
• Disturb and its Mitigation in Ferroelectric Field-Effect Transistors With Large Memory Window for NAND Flash Applications
  IEEE Electron Device Letters 2024 15 citations DOI: 10.1109/LED.2024.3467210
  +Save
• Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications
  IEEE Electron Device Letters 2024 24 citations DOI: 10.1109/LED.2024.3437239
  +Save
• The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors
  Journal of Applied Physics 2024 10 citations DOI: 10.1063/5.0180919
  +Save
• Interfacial Oxide Layer Scavenging in Ferroelectric Hf0.5Zr0.5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages
  IEEE Transactions on Electron Devices 2023 10 citations DOI: 10.1109/TED.2023.3288510
  +Save
• A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage
  IEEE Electron Device Letters 2023 20 citations DOI: 10.1109/LED.2022.3231123
  +Save
• Sub 5 Å-EOT HfₓZr1–x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process
  IEEE Transactions on Electron Devices 2022 54 citations DOI: 10.1109/TED.2021.3131403
  +Save
• The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia
  IEEE Transactions on Electron Devices 2021 203 citations DOI: 10.1109/TED.2020.3046173
  +Save
• Low-Temperature Growth of Ferroelectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf>Thin Films Assisted by Deep Ultraviolet Light Irradiation
  ACS Applied Electronic Materials 2021 22 citations DOI: 10.1021/acsaelm.0c01065
  +Save
• Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors
  IEEE Electron Device Letters 2021 49 citations DOI: 10.1109/LED.2021.3055140
  +Save