SATISH CHANDRA

About

Dr. Satish Chandra is working as an Assistant Professor at MNNIT Allahabad, Prayagraj. Before joining MNNIT he was Post-Doctoral Fellow at Indian Institute of Technology, Gandhinagar. Before joining IIT Gandhinagar, Dr. Chandra has been working as Assistant Professor under National Project Implementation Unit (NPIU) at Madan Mohan Malaviya University of Technology, Gorakhpur, India from Sept. 2018 to Sept. 2021. He did his Ph. D. and M. Tech. from Indian Institute of Technology (Indian School of Mines), Dhanbad, India. Dr. Chandra did his B. Tech. from Sri Ramswaroop Memorial College of Engineering and Management, Lucknow, India. He has been working in the field of condensed matter physics, photonics and VLSI domain since 2014 and published 22 referred SCI/Thomson Reuters indexed journals and International Conference papers. Dr. Chandra had also been the President of SPIE Student Chapter IIT(ISM) Dhanbad in 2018, the Secretary of SPIE Student Chapter IIT(ISM) Dhanbad in 2017. He is life member of Optical Society of India (OSI) and member of IEEE - Institute of Electrical and Electronics Engineers, SPIE - Society of Photo-Optical Instrumentation Engineers and OSA - The Optical Society.

Employment

• Motilal Nehru National Institute of Technology Allahabad Assistant Professor
  2023 - Present
• Indian Institute of Technology Gandhinagar Post Doctoral Fellow
  2022 - 2023
• Madan Mohan Malaviya University of Technology Assistant Professor
  2018 - 2021

Education

• Indian Institute of Technology (Indian School of Mines), Dhanbad Master of Technology
  2013 - 2015
• APJ Abdul Kalam Technological University Bachellor of Technology
  2008 - 2012

Projects & Funding

Projects & funding information is unavailable.

Publications (23)

• DTMOS Based Low Power Tunable Differentiator and Integrator Using VDTA for PD, PI Controllers
  2026 DOI: 10.1007/978-981-95-2584-3_48
  +Save
• Structural, Electronics and Optical Properties of LiXY2 (X = Al, Ga, In; Y = S, Se, Te) Ternary Chalcogenide Semiconductors: a plasmon approach and first-principles study
  2026 DOI: 10.2139/ssrn.6508248
  +Save
• Adiabatic ECRL Technique for Implementation of Full Adder Using 180 nm FinFET Technology
  2026 DOI: 10.1007/978-981-95-2584-3_23
  +Save
• Density Functional Theory Calculation on Electronic, Elastic, and Optical Properties of ZnIn2Te4 and HgIn2Te4 Defect-Chalcopyrite Semiconductors Under Different Pressures
  Brazilian Journal of Physics 2025 DOI: 10.1007/s13538-025-01764-3
  +Save
• A Low-Power Tunable Differentiator Using Voltage Difference Transconductance Amplifier (VDTA) for Tunable PD Controller
  Journal of Circuits, Systems and Computers 2024 DOI: 10.1142/S0218126624502438
  +Save
• Delay and Dispersion Investigation of Optical Components for Microwave Photonic Filter
  Lecture Notes in Electrical Engineering 2023 DOI: 10.1007/978-981-19-0312-0_69
  +Save
• Physical Properties Resemblance of Optical Material ZnGeN2 with GaN Under Different Higher Pressures
  Lecture Notes in Electrical Engineering 2023 DOI: 10.1007/978-981-19-0312-0_66
  +Save
• Power Optimisation of UAV-Based Relay for Selective Decoding and Forward Protocol Co-operation in Wireless Communication
  Lecture Notes in Electrical Engineering 2023 DOI: 10.1007/978-981-19-0312-0_54
  +Save
• First-Principles Study of ZnIn2Te4 and HgIn2Te4 Defect-Chalcopyrite Semiconductors Under Different Pressures: Electronic, Elastic, And Optical Properties
  2021 DOI: 10.21203/rs.3.rs-648445/v1
  +Save
• Structural, electronic and elastic properties of ZnGeN2 and WZ-GaN under different hydrostatic pressures: A first-principle study
  International Journal of Modern Physics B 2019 DOI: 10.1142/s0217979219502977
  +Save