Employment
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VSSUT
Education
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NIST M.Tech
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Publications (5)
- Effect of asymmetric doping on electron transport mobility in In0.53Ga0.47As/ In0.52Al0.48As wide quantum well FET structure Save
- Asymmetric Doping‐Dependent Electron Transport Mobility in InxGa1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure Save
- Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET Save
- Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure Save
- Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors Save