Anupama Anand

About

Presently engaged as a Senior Research Scholar at the Solid State Physics Laboratory (SSPL), Defence Research and Development Organisation (DRDO), Ministry of Defence, Government of India. Concurrently, she is pursuing her Ph.D. in Electronic Science at the University of Delhi, South Campus.
She holds a Bachelor of Science (B.Sc.) degree in Electronic Science from Babasaheb Bhimrao Ambedkar Bihar University (BRABU), earned in 2016, and a Master of Science (M.Sc.) in Electronic Science from the University of Delhi, completed in 2018.
Her doctoral research focuses on the simulation and radio-frequency (RF) modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs)—semiconductor devices known for their superior performance in high-power and high-frequency applications. Her work involves the use of Technology Computer-Aided Design (TCAD) tools for predictive device modeling and compact model extraction for RF circuit integration, contributing to advancements in defense-grade electronic systems and strategic semiconductor technologies.

Employment

Employment history is unavailable.

Education

• University of Delhi Post-Graduation (M.Sc.)
  2016 - 2018
• Babasaheb Bhimrao Ambedkar Bihar University Graduation (B. Sc. Honors)
  2012 - 2016
• Chandrasheel Vidyapeeth Intermediate
  2010 - 2012
• Prabhat Tara Girls’ High School Matriculation
  ? - 2010

Projects & Funding

Projects & funding information is unavailable.

Publications (16)

• Impact of Oblique Heavy Ion Irradiation on the Transient Response of Ga 2 O 3 MODFETs
  2026 International Conference on Intelligent Processing, Hardware, Electronics, and Radio Systems (CIPHER) 2026 DOI: 10.1109/cipher70417.2026.11523803
  +Save
• Reliability of GaN - based MISHEMTs incorporating a Buffer - Free Architecture post High Intensity UV Radiation
  2026 International Conference on Intelligent Processing, Hardware, Electronics, and Radio Systems (CIPHER) 2026 DOI: 10.1109/cipher70417.2026.11523865
  +Save
• Impact of Gate Length Scaling on Small-Signal Parameters for AlGaN-Channel HEMT with Graded AlGaN Buffer
  2026 DOI: 10.1007/978-981-92-0217-1_20
  +Save
• Small Signal and Large Signal Analysis of 150 nm GaN HEMT with Optimized Field Plates for Ku-Band Application
  IETE Technical Review 2025 DOI: 10.1080/02564602.2025.2560803
  +Save
• Investigating RF Parameters with Diverse Field Plate Structure for AlGaN/GaN HEMT with 0.15 µm Gate Length
  2025 DOI: 10.1007/978-981-96-3758-4_8
  +Save
• Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT
  IETE Technical Review 2024 DOI: 10.1080/02564602.2024.2315628
  +Save
• Optimization of 150 nm GaN HEMT for Ku-band applications using field plate engineering
  Micro and Nanostructures 2024 DOI: 10.1016/j.micrna.2024.207773
  +Save
• Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications
  Journal of Physics D: Applied Physics 2023 DOI: 10.1088/1361-6463/acdf6d
  +Save
• Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
  Applied Physics A 2023 DOI: 10.1007/s00339-023-06803-x
  +Save
• A Compact Large-Signal Model Generation of GaN HEMT for RF Circuit Design Implication
  2023 IEEE Wireless Antenna and Microwave Symposium (WAMS) 2023 DOI: 10.1109/wams57261.2023.10242911
  +Save