Nitish Kumar

About

I am currently a Senior Research Engineer at Micron Technology in Hyderabad, India. My research focuses on advanced CMOS technology, encompassing device fabrication, reliability characterization, device modeling, and TCAD simulation. My work includes electrical stress-induced reliability mechanisms such as ESD, HCI/HCD, NBTI/PBTI, TDDB, SILC, self-heating, and stress-induced degradation, along with leakage and short-channel effects including GIDL, DIBL, BTBT, and FN tunneling. I also investigate low-frequency noise (LFN) and random telegraph noise (RTN) for defect spectroscopy and device variability analysis, as well as electro-thermal and electro-mechanical effects, electromigration, thermal runaway, and ESD-induced thermal failure. My research further spans device characterization from cryogenic to high-temperature operation, analog/RF performance, piezoresistive pressure sensors, photodetectors, thermal sensors, and reliability-aware thermal design for SoCs. I also work on reliability qualification methodologies including wafer-level reliability (WLR), HTOL, and WHTOL.

Employment

• Micron Technology Senior Research Engineer - CMOS Device Reliability & Quality
  2026 - Present
• Institut polytechnique de Grenoble Researcher
  2025 - 2026
• Indian Institute of Technology Delhi Associate Research Fellow
  2024 - 2025
• SiClarity Visiting Research Scientist
  2024 - 2024
• IMEC Research Intern
  2023 - 2024
• Macquarie University Visiting Scholar
  2023 - 2023
• Indian Institute of Technology Delhi Senior Research Fellow
  2021 - 2024
• E.I.S Electronics Pvt. Ltd. QA Engineer
  2017 - 2018

Education

• Indian Institute of Technology Delhi Ph.D.
  2021 - 2024
• Dr. A P J Abdul Kalam Technical University M.Tech
  2018 - 2020

Projects & Funding

Projects & funding information is unavailable.

Publications (60)

• Investigation of Noise-Limited Broadband Optical Sensing Performance in Si1-xGex Nanowire Schottky-Barrier Reconfigurable Phototransistors
  IEEE Sensors Letters 2026 DOI: 10.1109/LSENS.2026.3701772
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• Physical Insights and Reliability Analysis of Si1-xGex Reconfigurable Phototransistor for CMOS-Compatible Broadband Optical Sensing
  IEEE 33rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2026) 2026
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• Thermal Insights of 3-D BS-PDN in Cloud Server SoC Using TCAD Modeling
  IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2026 DOI: 10.1109/TVLSI.2026.3673227
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• Thermal Insights of 3D BS-PDN in Cloud Server SoC using TCAD Modeling
  2026 DOI: 10.36227/techrxiv.176834464.44270492/v1
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• Reliability-aware scaling of nanoscale transistors: Self-heating and BTI/HCD degradation
  2026 DOI: 10.36227/techrxiv.176834466.60566102/v1
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• Investigating the Lateral Trap Position Dependence of RTN Amplitudes in FD-SOI MOSFETs
  2026 DOI: 10.36227/techrxiv.176857878.83778848/v1
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• Bias-Tunable Optical Response of Silicon Nanowire Reconfigurable Phototransistor
  2026 DOI: 10.36227/techrxiv.176857885.51670922/v1
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• Optical sensing performance and electrostatic reliability of silicon nanowire reconfigurable phototransistors
  APL Electronic Devices 2026 DOI: 10.1063/5.0320582
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• Performance Evaluation and Reliability Insights for Silicon Nanowire Reconfigurable Phototransistors
  2026 DOI: 10.36227/techrxiv.176834516.67842888/v1
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• Impact of Electro-Thermal Transport on HCI and BTI Lifetime of Twin Nanowire FETs: Different Operational Modes
  IEEE Transactions on Device and Materials Reliability 2025 DOI: 10.1109/TDMR.2025.3570616
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