0000-0002-9101-6889 Employment
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Publications (26)
- Demonstration of Fe-Doped GaN Buffer HEMT to Achieve fMAX of 167 GHz Save
- Design of PI controller for ship refrigerated containers transportation system Save
- Nanosheet transistors: materials, devices, systems and applications Save
- 253 GHz fT Graded-Channel AlGaN/GaN High-Electron-Mobility Transistors with New Cliff Barrier for Millimeter Wave High-Frequency Applications Save
- A Mini-Invasive Bladder Urine Pressure Measurement System using IoT Save
- A new Vertical C-shaped Silicon Channel Nanosheet FET with Stacked High-K Dielectrics for Low Power Applications Save
- Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs Save
- Influence of Doping Engineering in 1 μm Drift Layer Quasi-Vertical Fin Field-Effect Transistor for Achieving >139 V Breakdown Voltage Save
- Investigations on Novel Dual Metal Gate-Vertical C-Channel Nanosheet FET with fT of 268 GHz for Beyond 5G Application Save
- Quasi Vertical FinFET with Step Graded Doping for Obtaining 0.037 mΩ.cm2 ON Resistance Save