M Ehteshamuddin

Employment

Employment history is unavailable.

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• Complete Charge-Based Artificial Neural Network Augmented Compact Model for Common Multi-Gate FETs
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3674073
  +Save
• Metalearning Based Adaptive Compact Modeling Framework for Advanced Transistors Across Technology Nodes
  IEEE Transactions on Artificial Intelligence 2025 DOI: 10.1109/TAI.2025.3557775
  +Save
• Epileptic Seizure Prediction Using Stacked CNN-BiLSTM: A Novel Approach
  IEEE Transactions on Artificial Intelligence 2024 DOI: 10.1109/TAI.2024.3410928
  +Save
• Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor
  Journal of Applied Physics 2024 DOI: 10.1063/5.0190143
  +Save
• Machine Learning-Assisted Multiobjective Optimization of Advanced Node Gate-All-Around Transistor for Logic and RF Applications
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3345288
  +Save
• Machine Learning Augmented Compact Modeling for Simultaneous Improvement in Computational Speed and Accuracy
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3251296
  +Save
• Universal Compact Model of Flicker Noise in Ferroelectric Logic and Memory Transistors
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3287825
  +Save
• Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes
  IEEE Journal of the Electron Devices Society 2023 DOI: 10.1109/JEDS.2023.3316835
  +Save
• Drain-engineered vertically stacked junctionless FET exhibiting complementary operation
  Journal of Computational Electronics 2021 DOI: 10.1007/s10825-020-01601-7
  +Save
• Investigating a Dual MOSCAP Variant of Line-TFET With Improved Vertical Tunneling Incorporating FIQC Effect
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2019.2942423
  +Save