Abhishek Kumar
University of California, Berkeley, Indian Institute of Technology Roorkee
0000-0002-9355-3354
About
I am a postdoctoral scholar in the BSIM Group at the Department of Electrical Engineering and Computer Sciences at the University of California, Berkeley.
Before that, I completed my Ph.D. in the Device Research Lab (DiRac Lab) at the Department of Electronics and Communication Engineering at the Indian Institute of Technology Roorkee, Uttarakhand, India. I was working as a Prime Minister's Research Fellow.
My research focuses on developing compact models for future-generation transistors and emerging memory technologies, including ferroelectric and ULTRARAM devices. Additionally, I am involved in TCAD simulations for reliability studies, including low-frequency noise, thermal noise, and NBTI.
Employment
-
University of California, Berkeley Postdoctoral Scholar2025 - Present
-
Indian Institute of Technology Roorkee Prime Minister's Research Fellow (PMRF)2021 - 2025
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (27)
- Ferroelectric Field Effect Transistor and Method to Perform the Multi-Bit Operation Using the Ferroelectric Field Effect Transistor Save
- Complete Charge-Based Artificial Neural Network Augmented Compact Model for Common Multi-Gate FETs Save
- Novel Charge Partitioning Compact Model Including Field-Dependent Mobility Degradation Effect for Nanoscale MOSFETs Save
- Artificial synapse based on ULTRARAM memory device for neuromorphic applications Save
- A method to generate additional volatile states using single-domain ferroelectric field-effect transistor Save
- Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr₂S₂I₂ Monolayer Save
- Performance Projection of Gate-All-Around (GAA)-Based Negative Capacitance Complementary FET (NC-CFET) Relative to Standard CFET Save
- A Compact Model for Perpendicular STT-MRAM Incorporating Free and Pinned Layer Thickness Dependence, Accurate Bias Dependence, and Real-Time 3-D Switching Dynamics Save
- Compact Modeling of Flicker and Thermal Noise in Ferroelectric Devices Save
- Physics, modeling, and benchmarking of ULTRARAM: A compound semiconductor-based memory device Save