Ashish Kumar

About

My research work is primarily focussed on high voltage 4H-SiC power devices (JFETs, MOSFETs and IGBTs) for medium voltage (>6kV) applications.

Highlights:

-Design, fabrication and device modeling of 4H-SiC n-IGBTs (>15kV) and 4H-SiC Power MOSFETs
-Electrical switching and conduction characterization of high voltage 4H-SiC power devices
-Active gate drive techniques for high voltage 4H-SiC power devices
-Medium voltage power converters (>6kV) using modern high voltage 4H-SiC power devices
-High bandwidth current sensing and current control techniques

Employment

• Eaton Corp Engineering Intern
  2018 - 2018
• Wolfspeed Research Scientist

Education

• NC State University Ph.D.
  2015 - 2021
• Indian Institute of Science Master of Science (Engineering)
  2011 - 2014
• Indian Institute of Technology Kharagpur B.Tech. (Hons.)
  2004 - 2008

Projects & Funding

Projects & funding information is unavailable.

Publications (32)

• Characterization and System Benefits of Using 3.3 kV All-SiC MOSFET Modules in MV Power Converter Applications
  PCIM Europe Conference Proceedings 2023 DOI: 10.30420/566091132
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• High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules
  2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 2023 DOI: 10.1109/ECCE53617.2023.10362446
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• High-Density, High-Power Converters Using Paralleled 3.3 kV All-Silicon Carbide Power Modules
  PCIM Europe Conference Proceedings 2023 DOI: 10.30420/566091331
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• Partial Discharge Evaluation of a 3.3-kV SiC MOSFET Power Module at Flight-Altitude Pressures Under 60 Hz Ac Voltage
  2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023 2023 DOI: 10.1109/ECCE53617.2023.10362648
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• Short-Circuit Ruggedness Characterization of State-of-The-Art 3.3 kV SiC MOSFETs
  2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 2023 DOI: 10.1109/WiPDA58524.2023.10382189
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• A High-Current 1.7 kV SiC Module Enabling High Efficiency, High Power Density Renewable Energy Applications
  PCIM Europe Conference Proceedings 2023 DOI: 10.30420/566091067
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• Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs
  2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 2022 DOI: 10.1109/ECCE50734.2022.9947390
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• Short-Circuit Ruggedness and Partial Discharge Evaluation of a 3.3 kV SiC MOSFET Power Module
  2022 IEEE 9th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022 2022 DOI: 10.1109/WiPDA56483.2022.9955280
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• Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs
  2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe 2021
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• Series Connection of 10 kV SiC Current Switches for PWM Current Source Converter Based High Power 7.2 kV Motor Drive Applications
  2021 23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe 2021
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