Himanshu Diwakar

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Publications (6)

• A Generic Framework for MOSFET Reliability—Part II: Gate and Drain Stress—HCD
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3308526
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• Modeling of Classical Channel Hot Electron Degradation in n-MOSFETs Using TCAD
  IEEE Transactions on Electron Devices 2022 DOI: 10.1109/TED.2022.3175943
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• Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUBStress) in n-MOSFETs
  IEEE International Reliability Physics Symposium Proceedings 2022 DOI: 10.1109/IRPS48227.2022.9764505
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• Modeling of Channel Hot Electron Degradation in n-MOSFETs
  Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 2022 DOI: 10.1109/ICSICT55466.2022.9963349
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• TCAD Framework for HCD Kinetics in Low VDDevices Spanning Full VG/VDSpace
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.3021360
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• Study of Gate Misalignment Effects in Single-Material Double-Gate (SMDG) MOSFET Considering Source and Drain Lateral Gaussian Doping Profile
  Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018 2018 DOI: 10.1109/EDKCON.2018.8770500
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