Abhishek Vaidya

Employment

Employment history is unavailable.

Education

• University at Buffalo Doctor of Philosophy
  2015 - Present

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• Thin channel Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
  Applied Physics Letters 2024 DOI: 10.1063/5.0208580
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• Sub-100 nm {\beta}-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
  arXiv 2023 DOI: 10.48550/arxiv.2305.04725
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• Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
  Applied Physics Letters 2023 DOI: 10.1063/5.0149062
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• Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
  arXiv 2022 DOI: 10.48550/arxiv.2211.01088
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• Temperature dependent pulsed IV and RF characterization of β-(AlxGa1−x)2O3/Ga2O3 hetero-structure FET with ex situ passivation
  Applied Physics Letters 2022 DOI: 10.1063/5.0083657
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• Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
  IEEE Electron Device Letters 2021 DOI: 10.1109/LED.2021.3104256
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• Temperature-Dependent Current Dispersion Study in β-Ga₂O₃ FETs Using Submicrosecond Pulsed I–V Characteristics
  IEEE Transactions on Electron Devices 2021 DOI: 10.1109/TED.2021.3086434
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• Gallium oxide based power and RF device technologies
  2021 DOI: 10.1117/12.2587885
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• (Invited) Electron Transport in Bulk and 2DEGs in beta-Ga2O3 and kV Class Laterals Device in beta-Ga2O3
  ECS Meeting Abstracts 2020 DOI: 10.1149/ma2020-01231336mtgabs
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• Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate
  Journal of Applied Physics 2019 DOI: 10.1063/1.5113509
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