Muthubalan Varadharajaperumal

Employment

• SASTRA University Professor
  2013 - Present
• GlobalFoundries (Singapore) Principal Engineer
  2011 - 2012
• IBM India Private Limited Advisory Research Engineer
  2007 - 2011
• Auburn University Graduate Research Assistant
  2001 - 2007

Education

• Auburn University Ph.D.
  2003 - 2007
• Auburn University M.S.
  2001 - 2003
• Anna University Chennai B.E.
  1995 - 1999

Projects & Funding

Projects & funding information is unavailable.

Publications (16)

• Detailed hole collection mechanism in AlO x /SiO2 stack for passivating contact solar cells
  Journal of Physics D: Applied Physics 2026 DOI: 10.1088/1361-6463/ae6922
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• Extraction of contact resistivity for a partial contact solar cell
  Journal of Physics D: Applied Physics 2024 DOI: 10.1088/1361-6463/ad2b1e
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• Influence of boron implantation induced defects on solar cells: Modeling the process defects
  Journal of Applied Physics 2023 DOI: 10.1063/5.0130315
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• Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation
  Micro and Nanostructures 2022 DOI: 10.1016/j.spmi.2022.107164
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• Accuracy of Contact Resistivity Measurements for Electron-Selective Titanium Oxide Contacts in n-Type c-Si Solar Cell
  IEEE Journal of Photovoltaics 2021 DOI: 10.1109/JPHOTOV.2021.3056665
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• MoOxbased hole selective contact - Inference from the Simulation
  2020 47th IEEE Photovoltaic Specialists Conference (PVSC) 2020 DOI: 10.1109/pvsc45281.2020.9300602
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• Study of Surface Passivation and Charge Transport Barriers in DASH Solar Cell
  IEEE Journal of Photovoltaics 2019 DOI: 10.1109/JPHOTOV.2019.2926624
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• Hole-Collection Mechanism in Passivating Metal-Oxide Contacts on Si Solar Cells: Insights From Numerical Simulations
  IEEE Journal of Photovoltaics 2018 DOI: 10.1109/JPHOTOV.2018.2796131
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• Modeling of High Frequency Noise in SOI MOSFETs
  2010 23rd International Conference on VLSI Design 2010 DOI: 10.1109/vlsi.design.2010.82
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• 3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines
  IEEE Transactions on Nuclear Science 2008 DOI: 10.1109/tns.2008.2006840
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