M Meer

Employment

• Micron Technology DRAM PI Engineer
  2022 - Present
• Micron (United States) NAND Process Integration Engineer
  2022 - 2022
• Micron (Singapore) Senior Product Engineer
  2019 - 2022

Education

• Indian Institute of Technology Bombay PhD
  2013 - 2020
• Indian Institute of Technology Guwahati M. Tech.
  2007 - 2009

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• Performance improvement in NiO x -based GaN MOS-HEMTs
  Semiconductor Science and Technology 2022 DOI: 10.1088/1361-6641/ac77ad
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• Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping
  ACS Applied Electronic Materials 2020 DOI: 10.1021/acsaelm.0c00322
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• Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN
  Microelectronic Engineering 2020 DOI: 10.1016/j.mee.2019.111144
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• Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/ted.2019.2910608
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• Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs
  IEEE Transactions on Electron Devices 2018 DOI: 10.1109/ted.2018.2857468
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• Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures
  physica status solidi (a) 2018 DOI: 10.1002/pssa.201700656
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• Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
  IEEE Electron Device Letters 2018 DOI: 10.1109/led.2018.2884155
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• Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
  Solid-State Electronics 2017 DOI: 10.1016/j.sse.2017.02.002
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• Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs
  Semiconductor Science and Technology 2017 DOI: 10.1088/1361-6641/aa60a3
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• Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires
  physica status solidi (a) 2017 DOI: 10.1002/pssa.201600620
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