P. Vigneshwara Raja

Employment

• Indian Institute of Technology Dharwad Assistant Professor
  2022 - Present
• Laboratoire Ampère Postdoctoral Researcher
  2021 - 2022
• Tel Aviv University Post doctoral Researcher
  2019 - 2020
• Indian Institute of Technology Madras Post doctoral Researcher
  2018 - 2019

Education

• Indian Institute of Technology Bhubaneswar PhD
  2013 - 2017

Projects & Funding

Projects & funding information is unavailable.

Publications (42)

• Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
  physica status solidi (a) 2026 1 citation DOI: 10.1002/pssa.70385
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• Performance-limiting electron and hole traps in 4H-SiC PiN power diodes determined by combined DLTFS and TCAD studies
  Journal of Applied Physics 2026 0 citations DOI: 10.1063/5.0341120
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• Source-Connected Field-Plate Effects on Static Current, Trap Signature, and Thermal Resistance of AlGaN/GaN High Electron Mobility Transistor
  Physica Status Solidi A Applications and Materials Science 2026 1 citation DOI: 10.1002/pssa.202500837
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• Performance-Limiting Trapping Effects in n-Type Ga2O3 Schottky Barrier Diodes
  IEEE Transactions on Device and Materials Reliability 2026 0 citations DOI: 10.1109/TDMR.2026.3660452
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• Development and Validation of TCAD-Based Neutron Radiation Damage Model for 4H-SiC SBD Alpha-Particle Detectors
  IEEE Transactions on Nuclear Science 2026 4 citations DOI: 10.1109/TNS.2025.3644388
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• A New Method to Estimate Surface Donor Density (NTD) in AlGaN/GaN HEMT by Validated DCT Simulations
  physica status solidi (RRL) – Rapid Research Letters 2025 2 citations DOI: 10.1002/pssr.202500170
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• Accurate TCAD Simulation Model for High-Performance 4H-SiC Alpha-Particle Detectors
  IEEE Transactions on Nuclear Science 2025 5 citations DOI: 10.1109/TNS.2024.3509919
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• Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy
  IEEE Transactions on Device and Materials Reliability 2025 3 citations DOI: 10.1109/TDMR.2025.3602857
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• Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs
  Micro and Nanostructures 2025 3 citations DOI: 10.1016/j.micrna.2025.208197
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• Maximum, effective, and average thermal resistance for GaN-based HEMTs on SiC, Si and sapphire substrates
  Solid State Electronics 2025 6 citations DOI: 10.1016/j.sse.2025.109121
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