ARNAB SOM

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Publications (5)

• Design and analysis of gate underlapped GOI junctionless FinFET in presence of temperature variations for RF IC design applications
  Analog Integrated Circuits and Signal Processing 2026 DOI: 10.1007/s10470-026-02593-3
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• Device and circuit level performance assessments of gate engineered Ge/GaAs heterojunction doping less TFET
  International Journal of Numerical Modelling Electronic Networks Devices and Fields 2024 DOI: 10.1002/jnm.3175
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• Investigation of Device and Circuit-Level Performances of Dielectric Engineered Dopingless SOI Schottky Barrier MOSFET
  Lecture Notes in Electrical Engineering 2024 DOI: 10.1007/978-981-99-4495-8_4
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• Performance Assessments of Gate Engineered Dopingless Schottky Tunnel MOSFET in Presence of Interfacial Trap Charges
  Silicon 2023 DOI: 10.1007/s12633-023-02504-5
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• Performance Enhancement of Dielectric Engineered Doping Less InGaN Tunnel FET for Low Power Analog/Radio Frequency Applications
  Lecture Notes in Electrical Engineering 2023 DOI: 10.1007/978-981-99-0055-8_14
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