Dr.D.NIRMAL M.E.,Ph.D.,

About

Dr. D. Nirmal is a Full Professor and Head of Electronics and communication Engineering, Karunya Institute of Technology and sciences. He specialized in VLSI Design after his Bachelor of Engineering and received his Ph.D in Information and Communication Engineering from Anna University. His research interests includes Nanoelectronics, GaN Technology, Device and Circuit Simulation – GSL, Sensors, HEMT, Beyond 5G, Nanoscale device design and modelling. He is a founding chair of IEEE Electron Device Society Coimbatore chapter and volunteered several committees in IEEE. He has funding project tune of 1.2 Cores from various agencies like DRDO(Defence Research and Development Organization), Ministry of Electronics and Information Technology,ISRO(Indian Space Research Organization) and AICTE(All India Council of Technical Education). He is a recipient of various awards namely IEI-Young Engineer award,IETE Smt. Manorama Rathore memorial award 2022 from IETE and Young Scientist Award 2019 from the Academy of Sciences.
Prof.Nirmal has made more than 150+ peer reviewed research publications and three patents to his credits. He is also a Senior IEEE member. He has delivered many Keynote talks, lectures in National and International Level conferences/Faculty Development programs.

Employment

• Karunya Institute of Technology and Sciences Professor
  2020 - Present
• Karunya University ASSISTANT PROFESSOR
  2009 - 2013
• Karunya University LECTURER
  2007 - 2009

Education

• Anna University Chennai Ph.D
  ? - 2012
• Karunya University MASTER OF ENGINEERING
  ? - 2007
• Anna University Chennai BACHELOR OF ENGINEERING
  ? - 2005

Projects & Funding

Projects & funding information is unavailable.

Publications (162)

• Drift Layer Engineering for Electric Field Management in Vertical Gallium Nitride Fin Field Effect Transistors for Power Electronic Applications
  physica status solidi (a) 2026 DOI: 10.1002/pssa.202500885
  +Save
• Demonstration of Fe‐Doped GaN Buffer HEMT to Achieve fMAX of 167 GHz
  physica status solidi (a) 2025 DOI: 10.1002/pssa.202500706
  +Save
• Optimization and High‐Frequency Performance Evaluation of AlGaN/GaN High‐Electron‐Mobility Transistors Aspect Ratio Scaling for Millimeter‐Wave Applications
  physica status solidi (a) 2025 DOI: 10.1002/pssa.202500251
  +Save
• From FETs to Quantum Photodetectors: Celebrating a Century of Innovation [Women in Electron Devices]
  IEEE Electron Devices Magazine 2025 DOI: 10.1109/MED.2025.3571075
  +Save
• 253 GHz fT Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications
  physica status solidi (a) 2025 DOI: 10.1002/pssa.202400552
  +Save
• Nanosheet transistors: materials, devices, systems and applications
  Journal of Materials Science 2025 DOI: 10.1007/s10853-025-10827-4
  +Save
• A Review of Performance and Reliability Issues in D Flip‐Flops for Future Artificial Intelligence and Internet of Things Applications
  IET Circuits, Devices & Systems 2025 DOI: 10.1049/cds2/7132642
  +Save
• Optimizing deposition parameters and characterizing TiO2 thin films for future memristor applications
  Physica Scripta 2024 DOI: 10.1088/1402-4896/ad7aac
  +Save
• Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage
  physica status solidi (a) 2024 DOI: 10.1002/pssa.202400137
  +Save
• 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars
  Journal of Electronic Materials 2024 DOI: 10.1007/s11664-024-11014-y
  +Save