sandhyarani sahoo

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Publications (11)

• Direct Transfer of Monolayer MoS2 Device Arrays for Potential Applications in Flexible Electronics
  ACS Applied Nano Materials 2024 DOI: 10.1021/acsanm.3c05400
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• Reconfigurable Low-Power TiO2 Memristor for Integration of Artificial Synapse and Nociceptor
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.3c02727
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• High Responsivity in Monolayer MoS2 Photodetector via Controlled Interfacial Carrier Trapping
  ACS Applied Electronic Materials 2023 DOI: 10.1021/acsaelm.2c01567
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• Bipolar Resistive Switching in TiO2 Artificial Synapse Mimicking Pavlov’s Associative Learning
  ACS Applied Materials & Interfaces 2023 DOI: 10.1021/acsami.2c17228
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• Multifunctional 2D MoS2 Optoelectronic Artificial Synapse with Integrated Arithmetic and Reconfigurable Logic Operations for In‐Memory Neuromorphic Computing Applications
  Advanced Materials Technologies 2023 DOI: 10.1002/admt.202201125
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• Polarized Moiré Phonon and Strain-Coupled Phonon Renormalization in Twisted Bilayer MoS2
  The Journal of Physical Chemistry C 2022 DOI: 10.1021/acs.jpcc.2c04201
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• Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering
  Applied Physics A 2022 DOI: 10.1007/s00339-021-05243-9
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• Electric Field-Modulated Charge Transfer in Geometrically Tailored MoX2/WX2 (X = S, Se) Heterostructures
  The Journal of Physical Chemistry C 2021 DOI: 10.1021/acs.jpcc.1c07218
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• Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor
  Journal of Applied Physics 2021 DOI: 10.1063/5.0043884
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• Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device
  The Journal of Physical Chemistry Letters 2021 DOI: 10.1021/acs.jpclett.1c00121
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