Sinu Mathew

Employment

• National University of Singapore Research Fellow
  2012 - 2016
• Institute of Physics Visiting Scientist
  2008 - Present
• National University of Singapore Research fellow
  2008 - 2011

Education

• Institute of Physics Ph.D
  2001 - 2008

Projects & Funding

Projects & funding information is unavailable.

Publications (22)

• Band gap opening and surface morphology of monolayer graphene induced by single ion impacts of argon monomer and dimer ions
  Carbon 2021 DOI: 10.1016/j.carbon.2021.08.031
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• Temperature Dependent Structural Evolution of WSe2: A Synchrotron X-ray Diffraction Study
  Condensed Matter 2020 DOI: 10.3390/condmat5040076
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• Evidence of Rotational Fröhlich Coupling in Polaronic Trions
  Physical Review Letters 2020 DOI: 10.1103/PhysRevLett.125.086803
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• Polaronic Trions at the MoS<inf>2</inf>/SrTiO<inf>3</inf> Interface
  Advanced Materials 2019 DOI: 10.1002/adma.201903569
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• Enhancing image contrast of carbon nanotubes on cellular background using helium ion microscope by varying helium ion fluence
  Journal of Microscopy 2018 DOI: 10.1111/jmi.12604
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• Tailoring Mechanical Properties of Suspended Graphene by Energetic Ion Beams
  NEMS 2018 - 13th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems 2018 DOI: 10.1109/NEMS.2018.8556964
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• γ-MnS films with 3D microarchitectures: Comprehensive study of the synthesis, microstructural, optical and magnetic properties
  CrystEngComm 2018 DOI: 10.1039/c7ce01536d
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• Investigation of photocarrier losses in pyrite (FeS<inf>2</inf>) film consisting single crystal nanocubes
  World Congress on Recent Advances in Nanotechnology 2017 DOI: 10.11159/icnnfc17.118
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• Magneto-Optical Study of Defect Induced Sharp Photoluminescence in LaAlO<inf>3</inf> and SrTiO<inf>3</inf>
  Scientific Reports 2016 DOI: 10.1038/srep33145
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• Nickel-phosphide contact for effective Schottky barrier modulation in black phosphorus p-channel transistors
  2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 2016 DOI: 10.1109/VLSI-TSA.2016.7480535
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