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Hemant Verma

Research areas: Mathematics · Statistics and Probability · Survey Sampling and Estimation Techniques · Census and Population Estimation · Optimal Experimental Design Methods

ORCID iD 0000-0003-0147-2336
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About

Hemant Verma is a Ph.D. Candidate in Physics at Academia Sinica, enrolled in the Taiwan International Graduate Program (TIGP). He specializes in computational materials science, focusing on first-principles simulations to investigate hot carrier dynamics mediated by electron-phonon interactions in transition metal nitrides (TMNs).

Mr. Verma is highly skilled in ab-initio modeling using tools like VASP, Quantum ESPRESSO, and JDFTx, and methods such as DFT, GW, and Boltzmann transport. His research involves analyzing charge carrier lifetimes and transport coefficients using Wannierization and EPW, with results cross-validated by ultrafast pump-probe transient absorption spectroscopy. He aims to bridge computation and experiment to design efficient and stable optoelectronic materials. He holds an M.Sc. in Physics from the Indian Institute of Technology (IIT), Jodhpur.

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