Gopi Krishna Saramekala

Employment

• National Institute of Technology Calicut Assistant Professor
  2018 - Present

Education

• National Institute of Technology Rourkela Ph.D.
  2012 - 2016

Projects & Funding

Projects & funding information is unavailable.

Publications (11)

• Monolithic pH Sensing via Frequency Modulation in 2D-NCISFET-Based Ring Oscillators
  IEEE Sensors Journal 2025 DOI: 10.1109/JSEN.2025.3622639
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• Enhanced Logic‐In‐Memory Systems with Recessed‐Source/Drain Feedback Field Effect Transistors
  physica status solidi (a) 2025 DOI: 10.1002/pssa.202500402
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• Analyzing Interface Trap Influence on Sensitivity, Noise, and Response Time in 2-D Material Field-Effect Transistor pH Sensors: A Theoretical Framework
  IEEE Sensors Journal 2024 DOI: 10.1109/JSEN.2024.3472729
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• Investigation of recessed‐source/drain SOI feedback FET‐based integrate and fire neuron circuit with compact model of threshold switching devices
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2024 DOI: 10.1002/jnm.3295
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• Energy-Efficient Recessed-Source/Drain SOI Feedback FET-Based Oscillators and Coupled Networks for Neuromorphic Computing
  IEEE Access 2024 DOI: 10.1109/ACCESS.2024.3516537
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• Investigation of switching and inverter characteristics of Recessed-Source/Drain (Re–S/D) Silicon-on-Insulator (SOI) Feedback Field Effect Transistor (FBFET)
  Microelectronics Journal 2023 DOI: 10.1016/j.mejo.2023.105855
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• Negative capacitance silicon nanotube FET: a subthreshold modeling exploration of sub-60 mV/decade swing, negative drain-induced barrier lowering, and threshold voltage roll-off
  Journal of Computational Electronics 2022 DOI: 10.1007/s10825-022-01986-7
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• Sensitivity Analysis of Silicon Nanotube FET (Si NTFET) with TCAD Assisted Machine Learning
  Silicon 2022 DOI: 10.1007/s12633-021-01546-x
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• Investigation of Subthreshold Characteristics of Negative Capacitance Single-Active Layer Double-Gate (NC-SALDG) Thin-Film Transistor (TFT)
  Silicon 2022 DOI: 10.1007/s12633-020-00932-1
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• Impact of Drain Voltage Coupling on Device and Circuit-Level Performance of Negative Capacitance Silicon Nanotube FET
  IEEE Transactions on Nanotechnology 2022 DOI: 10.1109/TNANO.2022.3208208
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