Ashutosh Nandi

Employment

• National Institute of Technology Kurukshetra Assistant Professor
  2013 - Present

Education

• Indian Institute of Technology Roorkee PhD
  2010 - 2015

Projects & Funding

Projects & funding information is unavailable.

Publications (4)

• Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 2024 0 citations DOI: 10.1002/jnm.3160
  +Save
• Analytical Modeling of Gate-Stack DG-MOSFET in Subthreshold Regime by Green’s Function Approach
  IEEE Transactions on Electron Devices 2018 15 citations DOI: 10.1109/TED.2018.2862872
  +Save
• Modeling of Short-Channel Effects in DG MOSFETs: Green’s Function Method Versus Scale Length Model
  IEEE Transactions on Electron Devices 2018 28 citations DOI: 10.1109/TED.2018.2845875
  +Save
• Analytical Modeling of DG-MOSFET in Subthreshold Regime by Green’s Function Approach
  IEEE Transactions on Electron Devices 2017 29 citations DOI: 10.1109/TED.2017.2708603
  +Save