Shobhit Srivastava

Employment

Employment history is unavailable.

Education

• Sardar Vallabhbhai National Institute of Technology Surat Doctor of Philosophy
  2020 - Present

Projects & Funding

Projects & funding information is unavailable.

Publications (13)

• Self-SHE Pulse-Enabled 2-D Material-Based SOT-MTJ: A Scalable and Energy-Efficient Write Circuit for LiM Architectures
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2026 DOI: 10.1109/TCAD.2025.3596763
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• Self-Heating Aware Performance Investigation of Vertically and Sideway Stacked GAA Nanowire FETs at Sub-5nm Technology Node
  2026 DOI: 10.1109/VLSID68508.2026.00072
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• Impact of Random Dopant Fluctuation in Stacked Drain ExtendedNanosheets FET: A Physical Insight
  2026 DOI: 10.2139/ssrn.7398602
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• Impact of Body Bias on Metal–Ferroelectric–Insulator Stacked Si/SiGe Negative Capacitance Line TFET: A Physical Insight
  IEEE Transactions on Dielectrics and Electrical Insulation 2025 DOI: 10.1109/TDEI.2025.3576334
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• Impact of Unconventional Torque on the Performance of Weyl-Semimetal-Based SOT-MTJ: A Micromagnetic Study
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3353707
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• Influences of Source/Drain Extension Region on Thermal Behavior of Stacked Nanosheet FET
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3351596
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• Performance optimization of epitaxial-layer based Si/SiGe hetero-junction area scaled tunnel FET label-free biosensors considering steric hindrance
  Solid-State Electronics 2023 DOI: 10.1016/j.sse.2023.108810
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• Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance
  Solid-State Electronics 2023 DOI: 10.1016/j.sse.2023.108757
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• Understanding the Impact of Extension Region on Stacked Nanosheet FET: Analog Design Perspective
  Solid-State Electronics 2023 DOI: 10.1016/j.sse.2023.108758
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• Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective
  IEEE Transactions on Device and Materials Reliability 2023 DOI: 10.1109/TDMR.2022.3227942
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