Rasik Rashid Malik

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Publications (17)

• Physical Insights Into the Impact of p-GaN Sidewall Passivation on Gate Leakage, Threshold Voltage Instability, and Gate Breakdown Behavior in p-GaN Gate AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3668727
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• Achieving Ultrahigh Threshold Voltage in Enhancement-Mode AlGaN/GaN HEMTs With an AlxTiyO/p-GaN Integrated Gate Stack—Part II
  IEEE Transactions on Electron Devices 2026 DOI: 10.1109/TED.2026.3652534
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• Physical Insights Into Turn-On Mechanisms in p-GaN Gate AlGaN/GaN HEMTs—Part I
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3615921
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• Unique Surface Passivation Stoichiometry Dependence of Dynamic On-Resistance and Its Suppression in p-GaN Gate AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2025 DOI: 10.1109/TED.2025.3585910
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• Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3462375
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• Physical Insights Into the Drain Current Injection-Induced Device Instabilities in AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2024.3427097
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• Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si
  IEEE Transactions on Electron Devices 2024 DOI: 10.1109/TED.2023.3326111
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• Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R on Behavior in AlGaN/GaN HEMTs—Part I
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3323439
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• Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes
  IEEE Transactions on Electron Devices 2023 DOI: 10.1109/TED.2023.3321864
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• Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences
  2023 IEEE International Reliability Physics Symposium (IRPS) 2023 DOI: 10.1109/irps48203.2023.10118255
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