Amretashis Sengupta

About

Amretashis Sengupta received the Ph.D. (Engg.) degree from Jadavpur University, Kolkata, India, in 2012. He received his post-doctoral training from Indian Institute of Science, Bangalore (2012-14) and University of Bremen, Germany (2016-17). He was a fellow of the Hanse-Wissenschaftkolleg(HWK), Delmenhorst, Germany from 2016-17. He received the DST INSPIRE Faculty award from the Department of Science and Technology, Government of India, in 2013, and served as a Assistant Professor (INSPIRE Faculty) in the Indian Institute of Engineering Science and Technology (IIEST), Shibpur, India from April 2014 to March 2019. His research interests include 2-D layered materials, metal-ion batteries and supercapacitors.

Employment

• Galgotias University Associate Professor
  2023 - Present

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (56)

• Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions
  IEEE Transactions on Nanotechnology 2024 DOI: 10.1109/TNANO.2024.3504963
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• Defects altered n/p-type Fe/Ga modified ZnO for photo-sensing applications
  Materials Today Communications 2023 DOI: 10.1016/j.mtcomm.2023.106371
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• Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source
  Solid-State Electronics 2022 DOI: 10.1016/j.sse.2022.108339
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• First principles study of Li adsorption properties of a Borophene based hybrid 2D material B5Se
  Applied Surface Science Advances 2022 DOI: 10.1016/j.apsadv.2022.100218
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• Electronic and optical properties of SnX2(X = S, Se)—InSe van der Waal’s heterostructures from first-principle calculations
  Physica Scripta 2019 DOI: 10.1088/1402-4896/ab3bb3
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• Photo-absorption properties of van der Waals heterostructure of monolayer InSe with silicene, germanene and antimonene
  Applied Surface Science 2019 DOI: 10.1016/j.apsusc.2019.01.054
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• Ab initio study of mono-layer 2-D insulators (X-(OH)2 and h-BN) and their use in MTJ memory device
  Microsystem Technologies 2019 DOI: 10.1007/s00542-018-3728-2
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• Carrier Transport and Thermoelectric Properties of Differently Shaped Germanene (Ge) and Silicene (Si) Nanoribbon Interconnects
  IEEE Transactions on Electron Devices 2019 DOI: 10.1109/TED.2018.2882869
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• Effect of Uniaxial Strain on Properties of Blue Phosphorene-CNT Heterojunction
  Proceedings of 3rd International Conference on 2019 Devices for Integrated Circuit, DevIC 2019 2019 DOI: 10.1109/DEVIC.2019.8783399
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• Performance limits of monolayer 1T'-ReS<inf>2</inf> nanoscale MOSFETs
  2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 2018 DOI: 10.1109/NMDC.2017.8350504
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