Narendra Rai

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Publications (4)

• Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis
  Journal of Applied Physics 2024 DOI: 10.1063/5.0228156
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• Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
  Journal of Applied Physics 2023 DOI: 10.1063/5.0176944
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• Improved Lumped Element Model for GaN-based MIS-HEMT gate stack in the spill-over regime
  2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2020 DOI: 10.1109/edtm47692.2020.9117823
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• Efficient Modeling of Barrier Resistance for an Improved Lumped Element Model of GaN-Based MIS-HEMT Gate Stack
  IEEE Journal of the Electron Devices Society 2020 DOI: 10.1109/JEDS.2020.3025176
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