MD
Mr ANIL PRASAD DADI Asst Professor Dept of ECE ANITS
Anil Neerukonda Institute of Technology & Sciences, National Institute of Technology Mizoram, National Institute of Technology Calicut
Research areas: Engineering · Electrical and Electronic Engineering · GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Advancements in Semiconductor Devices and Circuit Design
0000-0003-1356-000X
Employment
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ANIL NEERUKONDA INSTITUTE OF TECHNOLOGY AND SCIENCES Assistant Professor-Teaching2006 - Present
Education
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National Institute of Technology Mizoram Ph.D2023 - 2026
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National Institute of Technology Calicut M.Tech(Microelectronics and VLSI Design)2011 - 2013
Projects & Funding
Projects & funding information is unavailable.
Publications (13)
- Simulation Based Design and Characterization of a 150 nm GaN HEMT Small‐Signal Model for High‐Frequency and Low‐Noise Applications Save
- Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications Save
- Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit Save
- Design and optimization of a buffer-free AlGaN/GaN HEMT with dielectric stack engineering for high power and frequency applications Save
- An Advanced Electrothermal Small-Signal Compact Modeling of 250 nm GaN HEMTs Using ASM Methodology Save
- Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design Save
- Investigation of High-k Dielectric Passivation Effects on DC Performance of AlN/β-Ga2O3 HEMTs Save
- Optimizing the Design of Non-Linear Power Amplifier Using an Advanced Small-Signal Model for AlGaN/GaN HEMT Save
- Performance Enhancement in Double-Gate TFETs Using a Gallium Antimonide Source Pocket Save
- Effect of Buried depth, Thickness of Channel and Gate length on Breakdown Voltage in AlGaN/GaN HEMT Save
- Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration Save
- Different Spreading Sequences For Performance Comparison Of Ds-Ss System Save
- Performance comparison of 4H-SiC mesfets Save