Bhanu B. Upadhyay

Employment

• Reliance Industries Ltd Reliance Corporate Park Ghansoli Engineer
  2012 - 2013

Education

• Indian Institute of Technology Bombay PhD
  2014 - Present
• National Institute of Technology B.Tech
  2008 - 2012

Projects & Funding

Projects & funding information is unavailable.

Publications (10)

• Improvements From SiC Substrate Thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions
  IEEE Electron Device Letters 2021 DOI: 10.1109/LED.2021.3068863
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• Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.3019359
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• Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs
  Applied Surface Science 2019 DOI: 10.1016/j.apsusc.2019.03.065
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• Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors
  Journal of Applied Physics 2018 DOI: 10.1063/1.5044590
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• Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures
  Journal of Applied Physics 2018 DOI: 10.1063/1.5026167
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• Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures
  physica status solidi (a) 2018 DOI: 10.1002/pssa.201700656
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• Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs
  Solid-State Electronics 2018 DOI: 10.1016/j.sse.2017.11.001
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• Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
  IEEE Electron Device Letters 2018 DOI: 10.1109/led.2018.2884155
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• Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
  Solid-State Electronics 2017 DOI: 10.1016/j.sse.2017.02.002
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• Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts
  Solid-State Electronics 2016 DOI: 10.1016/j.sse.2016.04.005
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