Yanwei Cao

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Publications (49)

• Electronic structure of an artificial two-dimensional polar metal
  Physical Review B 2026 DOI: 10.1103/4xp6-nlns
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• Epitaxial growth of superconducting TiN films by atomic layer deposition
  Applied Physics Letters 2026 DOI: 10.1063/5.0336132
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• Electronic and optical properties of broad-spectrum transparent and conductive oxide films
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 2026 DOI: 10.1116/6.0005209
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• Enhanced Ultraviolet Transparency of Highly Conductive Oxide Films
  ACS APPLIED ELECTRONIC MATERIALS 2026 DOI: 10.1021/ACSAELM.5C02712
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• Field-Free Exchange-Bias Reversal in a Substrate-Directed Self-Assembled 2-(1-3)-Type Ferrimagnet/Antiferromagnet Nanocomposite
  ADVANCED FUNCTIONAL MATERIALS 2026 DOI: 10.1002/ADFM.202528760
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• Interface-Enhanced Superconductivity in Ultrathin TiN Proximitized by Topological Insulators
  ACS NANO 2026 DOI: 10.1021/ACSNANO.5C20630
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• Tuning Carrier Type and Density in Highly Conductive and Infrared-Transparent (Bi1-x Sb x )2Te3 Films
  ACS APPLIED ELECTRONIC MATERIALS 2026 DOI: 10.1021/ACSAELM.5C02020
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• Water-soluble hexagonal BaAl2O4 as sacrificial layer for freestanding crystalline membranes and flexible devices
  NATURE MATERIALS 2026 DOI: 10.1038/S41563-026-02486-W
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• Interfacial coincidence structure between rocksalt TiN and perovskite oxide YAlO3 studied at the atomic scale
  Physical Review B 2025 DOI: 10.1103/dvnz-nl5l
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• Superconducting diode effect in gradiently strained Nb0.5Ti0.5N films
  Applied Physics Reviews 2025 DOI: 10.1063/5.0270321
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• The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics
  Advanced Materials Interfaces 2025 DOI: 10.1002/admi.202500116
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• Epitaxy of high-quality antiferromagnetic metal chromium nitride films with 90° and 40° off-axis magnetron sputtering
  Journal of Vacuum Science & Technology A 2025 DOI: 10.1116/6.0004445
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• Correlation-Driven 3d Heavy Fermion Behavior in LiV2O4
  CHINESE PHYSICS LETTERS 2025 DOI: 10.1088/0256-307X/42/10/100710
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• Determination of Work Function in Single-Crystalline and Polycrystalline TiN Films
  JOURNAL OF PHYSICAL CHEMISTRY C 2025 DOI: 10.1021/ACS.JPCC.5C02684
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• Epitaxy and Electronic Properties of Ultrawide Bandgap Aluminum Oxynitride Films
  ACS APPLIED ELECTRONIC MATERIALS 2025 DOI: 10.1021/ACSAELM.5C00197
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• One-Step Epitaxy of Transition Metal Nitride Nanopillar Arrays with an Oxidation-Tunable Hyperbolic Dispersion
  ACS APPLIED MATERIALS & INTERFACES 2025 DOI: 10.1021/ACSAMI.4C13931
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• Room Temperature Epitaxy of Wafer-Scale Copper Films with High Electronic and Optical Performance
  ACS APPLIED ELECTRONIC MATERIALS 2025 DOI: 10.1021/ACSAELM.4C02292
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• Superconducting Diode Effect in Gradiently Strained Nb0.5Ti0.5N Films
  Arxiv 2025
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• The Rise of Refractory Transition-Metal Nitride Films for Advanced Electronics and Plasmonics
  Arxiv 2025
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• Synthesis of epitaxial LuN films
  Heliyon 2024 DOI: 10.1016/j.heliyon.2024.e33343
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