DP
Employment
Employment history is unavailable.
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (110)
- Temperature-dependent wake-up phenomena in AlScN ferrodiode memory devices Save
- Ti-driven modulation of charge ordering, defect chemistry, and dielectric response in BiMn2O5 multiferroics Save
- Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors Through Boron Incorporation Save
- 2D, Physical-Vapor Growth of Low-Coercivity, Epitaxial Ferroelectric Sc0.3Al0.7N on Scalable Substrates Save
- Above room temperature multiferroic and magnetoelectric properties of (1-Φ) PZTFT-Φ CZFMO particulate composites Save
- Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 {deg}C Save
- Al0.68Sc0.32N/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C Save
- Enhancement of Multiferroic Properties of La-Doped GaFeO3 Save
- Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays Save
- Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays Save
- Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation Save
- Materials for high-temperature digital electronics (vol 9, pg 790, 2024) Save
- Morphotropic Phase Boundary (MPB) Induced Enhancement of Ferroelectric and Piezoelectric Properties in Li and Ta modified K0.5Na0.5NbO3 Save
- Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures Save
- Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures Save
- Studies on the compositional dependent structural and electrical properties of CaTiO3-modified K0.5Na0.5NbO3 piezoelectric system Save
- A Comprehensive Comparison of the Structural, Ferroelectric, Energy Storage, and Photocatalytic Properties of Chemical Composition-Tailored Perovskite Ceramics Save
- A scalable ferroelectric non-volatile memory operating at 600 °C Save
- Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000∘C Save
- Materials for High Temperature Digital Electronics Save