About
PERSONAL DATA:
Date of Birth : 20 September, 1971.
Nationality : Indian
Sex : Male
Marital Status: Married
EDUCATION:
B. Sc (Physics Hons.), Burdwan University, West Bengal, India 1992.
M. Sc. (Physics), Jawaharlal Nehru University, New Delhi, India 1995.
Ph.D. (Physics), Jawaharlal Nehru University, New Delhi, India 2001
Thesis Title: GaN and SiC: Some Aspects of Transport and Optical Properties
PROFESSIONAL ASSIGNMENT:
Research Associate at Paul Drude Institut für Festkörperelektronik, Berlin, Germany
From January, 2001- November, 2002
Scientist at Paul Drude Institut für Festkörperelektronik, Berlin, Germany
From December, 2002-August, 2005
EU Guest-Scientist under a Marie Curie Excellence Grant at The University of
Duisburg-Essen, Duisburg, Germany
From September, 2005- June, 2006
Assistant professor (From June, 2006 to June, 2012): Department of Physics, Indian Institute
of Technology, Bombay
Associate professor (From June, 2012 to Nov. 2016): Department of Physics, Indian Institute
of Technology, Bombay
Professor (From Dec. 2016 to date): Department of Physics, Indian Institute
of Technology, Bombay
RESEARCH INTERESTS:
• Growth of semiconductor epitaxial films and nanostructures
• Transport and optical properties of low dimensional semiconductor structures
• Magnetism in Semiconductors
Employment
-
Indian Institute of Technology Bombay Professor
Education
Education history is unavailable.
Projects & Funding
Projects & funding information is unavailable.
Publications (45)
- Ultrafast and Broadband Self‐Biased Photodetector Using CdSe/CdS Stacked Nanolayered Heterostructure Save
- Modulation of magnetic anisotropy and magnetic domains by Ta/Pt buffer layer and stacking sequence in Ta/Py/Pt heterostructures Save
- Time dynamics of excitons in monolayers of transition metal dichalcogenides Save
- CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications Save
- Controlled p-type doping in (111)NiO epitaxial films through ions irradiation Save
- Si-Ga2O3/p-GaN epitaxial heterostructure based self-powered and visible-blind UV photodetectors with fast and electrically tunable response time Save
- Spontaneous Growth of Circular Domains of MoS2 Monolayers Using the Chemical Vapor Deposition Technique Save
- Experimental demonstration of two distinct pathways of trion generation in monolayer MoS2 Save
- Absorption of Light by Excitons Save
- Recombination of Excitons Save