Jaewon Jang

Employment

• Kyungpook National University Assistant Prof.
  2016 - Present
• Samsung Advanced Institute of Technology Researcher
  2015 - 2016
• UC Berkeley Post Doc. Researcher
  2014 - 2015

Education

• UC Berkely pH. D.
  2008 - 2013

Projects & Funding

Projects & funding information is unavailable.

Publications (29)

• Effects of Annealing Temperature Combinations in InOx/AlOx Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors
  Materials 2025 DOI: 10.3390/ma18225142
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• Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives
  Materials 2024 DOI: 10.3390/ma17215252
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• UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors
  Nanomaterials 2024 DOI: 10.3390/nano14090791
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• Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors
  Nanomaterials 2024 DOI: 10.3390/nano14050466
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• Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory
  Nanomaterials 2024 DOI: 10.3390/nano14060532
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• Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing
  Nanomaterials 2023 DOI: 10.3390/nano13152231
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• Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks
  Nanomaterials 2023 DOI: 10.3390/nano13172432
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• Sol–Gel-Processed Y2O3–Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices
  Nanomaterials 2023 DOI: 10.3390/nano13172462
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• Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries
  Nanomaterials 2023 DOI: 10.3390/nano13132026
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• Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment
  Nanomaterials 2023 DOI: 10.3390/nano13111722
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• Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment
  Inorganics 2022 DOI: 10.3390/inorganics10120228
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• Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
  Electronics 2022 DOI: 10.3390/electronics11203365
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• Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
  Nanomaterials 2022 DOI: 10.3390/nano12193526
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• Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes
  Materials 2022 DOI: 10.3390/ma15196859
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• Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors
  Coatings 2022 DOI: 10.3390/coatings12101534
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• Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors
  Nanomaterials 2022 DOI: 10.3390/nano12183097
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• Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field
  Materials 2022 DOI: 10.3390/ma15051943
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• Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process
  Materials 2022 DOI: 10.3390/ma15051899
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• Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors
  Electronics 2021 DOI: 10.3390/electronics10141629
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• Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT
  Materials 2021 DOI: 10.3390/ma14061488
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