Sandip Lashkare

Employment

• Indian Institute of Technology Gandhinagar Assistant Professor

Education

Education history is unavailable.

Projects & Funding

Projects & funding information is unavailable.

Publications (20)

• Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM
  ACS Applied Electronic Materials 2020 DOI: 10.1021/acsaelm.0c00297
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• Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing
  IEEE Electron Device Letters 2020 DOI: 10.1109/led.2020.3010858
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• Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
  2020 Device Research Conference (DRC) 2020 DOI: 10.1109/drc50226.2020.9135171
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• PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem
  APL Materials 2019 DOI: 10.1063/1.5108694
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• Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing
  2019 IEEE 9th International Nanoelectronics Conferences (INEC) 2019 DOI: 10.1109/inec.2019.8853856
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• Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise
  2019 Device Research Conference (DRC) 2019 DOI: 10.1109/drc46940.2019.9046471
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• PCMO RRAM for Integrate-and-Fire Neuron in Spiking Neural Networks
  IEEE Electron Device Letters 2018 DOI: 10.1109/led.2018.2805822
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• Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics
  Neurocomputing 2018 DOI: 10.1016/j.neucom.2018.09.019
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• A case for multiple and parallel RRAMs as synaptic model for training SNNs
  2018 International Joint Conference on Neural Networks (IJCNN) 2018 DOI: 10.1109/ijcnn.2018.8489429
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• Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing
  IEEE Electron Device Letters 2018 DOI: 10.1109/led.2018.2854732
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