Dr Kumud Ranjan

Employment

Employment history is unavailable.

Education

• Nanyang Technological University PhD
  2016 - 2020

Projects & Funding

Projects & funding information is unavailable.

Publications (9)

• GaN-on-Si HEMT for D-Band Power Amplification Demonstrating 0.67 W/mm at 10 V
  IEEE Electron Device Letters 2025 11 citations DOI: 10.1109/LED.2025.3591141
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• AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets
  IEEE Electron Device Letters 2024 20 citations DOI: 10.1109/LED.2024.3483888
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• Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures
  Applied Physics Express 2020 3 citations DOI: 10.35848/1882-0786/ab93a0
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• Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond
  physica status solidi (a) 2020 2 citations DOI: 10.1002/pssa.201900815
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• CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and high Johnson’s figure-of-merit of 8.8 THz V
  Applied Physics Express 2020 34 citations DOI: 10.7567/1882-0786/ab659f
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• Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer
  Japanese Journal of Applied Physics 2020 9 citations DOI: 10.7567/1347-4065/ab65cd
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• Deeply-scaled GaN-on-Si high electron mobility transistors with record cut-off frequency f T of 310 GHz
  Applied Physics Express 2019 33 citations DOI: 10.7567/1882-0786/ab56e2
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• Investigations of temperature-dependent interface traps in AlGaN/GaN HEMT on CVD-diamond
  Applied Physics Express 2019 11 citations DOI: 10.7567/1882-0786/ab45d2
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• Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond
  IEEE Journal of the Electron Devices Society 2019 45 citations DOI: 10.1109/JEDS.2019.2947564
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