M Das

Employment

Employment history is unavailable.

Education

• Gauhati University Ph D
  2011 - Present

Projects & Funding

Projects & funding information is unavailable.

Publications (15)

• Layer dependent pyro-phototronic effect in Al/ nanostructured porous silicon multi-layer (PS-ML) UV sensing Schottky photovoltaic device
  Materials Letters 2023 DOI: 10.1016/j.matlet.2023.134602
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• Pyro-phototronics mediated ultraviolet visible radiation sensing in Al/ nanostructured porous silicon multilayered Schottky photovoltaic device
  Optical Materials 2022 DOI: 10.1016/j.optmat.2022.112920
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• Enhanced UV–visible photoresponsivity of annealed Al+Au/n-ZnO:p-Si heterojunction self-powered photodiode
  Materials Letters 2022 DOI: 10.1016/j.matlet.2022.132040
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• Ageing mediated silicon suboxide interlayer growth in porous silicon: p-Si heterostructured metal-semiconductor-metal device for enhanced UV-visible photodetection
  Thin Solid Films 2021 DOI: 10.1016/j.tsf.2021.138962
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• Enhanced UV-visible photo responsivity of annealed Al/porous silicon (PS): p-Si Schottky device
  Materials Letters 2021 DOI: 10.1016/j.matlet.2021.129972
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• Distinct and enhanced ultraviolet to visible ZnS-porous silicon (PS):p-Si hybrid metal-semiconductor-metal (MSM) photodetector
  Materials Today: Proceedings 2021 DOI: 10.1016/j.matpr.2020.04.779
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• UV–Visible photo sensing properties of CdS-porous silicon (PS): P-Si and ZnO-PS: p-Si heterostructures metal-semiconductor-metal (MSM) based devices
  Materials Today: Proceedings 2021 DOI: 10.1016/j.matpr.2020.04.773
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• Distinct band UV–Visible photo sensing property of ZnO-Porous silicon (PS):p-Si hybrid MSM heterostructure
  Materials Science in Semiconductor Processing 2020 DOI: 10.1016/j.mssp.2020.105188
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• Photo sensing properties of porous silicon (PS): P-Si and ZnO-Ps: P-Si -MSM devices: A comparative analysis
  AIP Conference Proceedings 2020 DOI: 10.1063/5.0017194
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• Photo sensing property of nanostructured CdS-porous silicon (PS):p-Si based MSM hetero-structure
  Journal of Materials Science: Materials in Electronics 2019 DOI: 10.1007/s10854-019-01470-2
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