Jayatika Sakhuja

About

Jayatika Sakhuja received the B.Tech. degree in Electronics and Communication Engineering from NIT Jalandhar in 2016. She completed her master's and is currently pursuing Ph.D. in Electrical Engineering from IIT Bombay, India. From 2016-2017, she worked with Samtel Avionics as a hardware design engineer and system integrator. Her research interests are semiconductor device physics for emerging non-volatile memories and neuromorphic computing, fabrication, and characterization of advanced memory devices.

Employment

• Indian Institute of Technology Bombay: Mumbai, Maharashtra, IN Research Assistant
  2018 - 2022
• Samtel Avionics Limited Engineer
  2016 - 2017

Education

• Indian Institute of Technology Bombay: Mumbai, Maharashtra, IN Graduate Student
  2018 - 2025

Projects & Funding

Projects & funding information is unavailable.

Publications (8)

• Low Voltage NIPIN Symmetric and Bi-Directional Diode for System Level ESD Protection
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3477747
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• Relevance of Hidden Transients in the Steady State Memristor Measurements
  IEEE Electron Device Letters 2024 DOI: 10.1109/LED.2024.3463388
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• Integration of Non-Filamentary Pr0.7Ca0.3MnO3– Based Memristor With Silicon-PN Junction
  IEEE Electron Device Letters 2023 DOI: 10.1109/LED.2023.3257430
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• Exploiting the electrothermal timescale in PrMnO3 RRAM for a compact, clock-less neuron exhibiting biological spiking patterns
  Semiconductor Science and Technology 2021 DOI: 10.1088/1361-6641/ac24e8
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• Experimentally Validated Pr0.7Ca0.3MnO3 RRAM Verilog-A model based Izhikevich Neuronal Dynamics
  2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2021 DOI: 10.1109/sispad54002.2021.9592590
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• Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM
  IEEE Transactions on Electron Devices 2020 DOI: 10.1109/TED.2020.3034289
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• Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed
  2020 Device Research Conference (DRC) 2020 DOI: 10.1109/drc50226.2020.9135171
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• Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing
  2019 IEEE 9th International Nanoelectronics Conferences (INEC) 2019 DOI: 10.1109/inec.2019.8853856
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